FCH070N60E ? n-channel superfet ? ii easy-drive mosfet ?2015 fairchild semiconductor corporation FCH070N60E rev. 1.0 www.fairchildsemi.com 1 april 2015 absolute maximum ratings t c = 25 o c unless otherwise noted. thermal characteristics symbol parameter FCH070N60E unit v dss drain to source voltage 600 v v gss gate to source voltage - dc 20 v - ac (f > 1 hz) 30 i d drain current - continuous (t c = 25 o c) 52 a - continuous (t c = 100 o c) 33 i dm drain current - pulsed (note 1) 156 a e as single pulsed avalanche energy (note 2) 1128 mj i ar avalanche current (note 1) 9.5 a e ar repetitive avalanche energy (note 1) 4.8 mj dv/dt mosfet dv/dt 100 v/ns peak diode recovery dv/dt (note 3) 20 p d power dissipation (t c = 25 o c) 481 w - derate above 25 o c3.85w/ o c t j , t stg operating and storage temperature range -55 to +150 o c t l maximum lead temperature for soldering, 1/8? from case for 5 seconds 300 o c symbol parameter FCH070N60E unit r jc thermal resistance, junction to case, max. 0.26 o c/w r ja thermal resistance, junction to ambient, max. 40 FCH070N60E n-channel superfet ? ii easy-drive mosfet 600 v, 52 a, 70 m features ? 650 v @ t j = 150c ?typ. r ds(on) = 58 m ? ultra low gate charge (typ. q g = 128 nc) ? low effective output capacitance (typ. c oss(eff.) = 457 pf) ? 100% avalanche tested ?rohs compliant applications ? telecom / sever power supplies ? industrial power supplies description superfet ? ii mosfet is fairchild semiconductor?s brand-new high voltage super-junction (sj) mosf et family that is utilizing charge balance technology for ou tstanding low on-resistance and lower gate charge performance. this technology is tailored to minimize conduction loss, provide superior switching perfor- mance, dv/dt rate and higher avalanche energy. consequently, superfet ii mosfet easy-drive seri es offers slightly slower rise and fall times compared to the superfet ii mosfet series. noted by the "e" part num ber suffix, this family helps manage emi issues and allows for easier design implementa- tion. for faster switching in applications where switching losses must be at an absolute minimu m, please consider the super- fet ii mosfet series. g d s to-247 g s d
www.fairchildsemi.com 2 ?2015 fairchild semiconductor corporation FCH070N60E rev. 1.0 FCH070N60E ? n-channel superfet ? ii easy-drive mosfet package marking and ordering information electrical characteristics t c = 25 o c unless otherwise noted. off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e characteristics part number top mark package packing method reel size tape width quantity FCH070N60E FCH070N60E to-247 tube n/a n/a 30 units symbol parameter test conditions min. typ. max. unit bv dss drain to source breakdown voltage v gs = 0 v, i d = 10 ma, t j = 25 c 600 - - v v gs = 0 v, i d = 10 ma, t j = 150 c 650 - - v bv dss / t j breakdown voltage temperature coefficient i d = 10 ma, referenced to 25 o c-0.7-v/ o c i dss zero gate voltage drain current v ds = 600 v, v gs = 0 v - - 1 a v ds = 480 v, v gs = 0 v,t c = 125 o c- 3.4 - i gss gate to body leakage current v gs = 20 v, v ds = 0 v - - 100 na v gs(th) gate threshold voltage v gs = v ds , i d = 250 a2.5-3.5v r ds(on) static drain to source on resistance v gs = 10 v, i d = 26 a - 58 70 m g fs forward transconductance v ds = 20 v, i d = 26 a -44-s c iss input capacitance v ds = 380 v, v gs = 0 v, f = 1 mhz - 3705 4925 pf c oss output capacitance - 116 155 pf c rss reverse transfer capacitance - 12.3 20 pf c oss(eff.) effective output capacitance v ds = 0 v to 480 v, v gs = 0 v - 457 - pf q g(tot) total gate charge at 10v v ds = 380 v, i d = 26 a, v gs = 10 v (note 4) - 128 166 nc q gs gate to source gate charge - 18 - nc q gd gate to drain ?miller? charge - 54 - nc esr equivalent series resistance f = 1 mhz - 0.6 - t d(on) turn-on delay time v dd = 380 v, i d = 26 a, v gs = 10 v, r g = 4.7 (note 4) -2968ns t r turn-on rise time - 28 66 ns t d(off) turn-off delay time - 122 254 ns t f turn-off fall time - 28 66 ns i s maximum continuous drain to source diode forward current - - 52 a i sm maximum pulsed drain to source diode forward current - - 156 a v sd drain to source diode forward voltage v gs = 0 v, i sd = 26 a - - 1.2 v t rr reverse recovery time v gs = 0 v, i sd = 26 a, di f /dt = 100 a/ s - 463 - ns q rr reverse recovery charge - 10.4 - c notes: 1. repetitive rating: pulse width limi ted by maximum junction temperature. 2. i as = 9.5 a, r g = 25 , starting t j = 25 c 3. i sd 26 a, di/dt 200 a/ s, v dd 380 v, starting t j = 25 c 4. essentially independent of operating temperature.
www.fairchildsemi.com 3 ?2015 fairchild semiconductor corporation FCH070N60E rev. 1.0 FCH070N60E ? n-channel superfet ? ii easy-drive mosfet typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs. source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 0.1 1 10 20 1 10 100 200 *notes: 1. 250 s pulse test 2. t c = 25 o c i d , drain current[a] v ds , drain-source voltage[v] v gs = 10.0v 8.0v 7.0v 6.5v 6.0v 5.5v 5.0v 4.5v 234567 1 10 100 200 -55 o c 150 o c *notes: 1. v ds = 20v 2. 250 s pulse test 25 o c i d , drain current[a] v gs , gate-source voltage[v] 0 25 50 75 100 125 150 175 200 0.04 0.06 0.08 0.10 0.12 0.14 *note: t c = 25 o c v gs = 20v v gs = 10v r ds(on) [ ], drain-source on-resistance i d , drain current [a] 0.00.30.60.91.21.5 0.001 0.01 0.1 1 10 100 200 *notes: 1. v gs = 0v 2. 250 s pulse test 150 o c i s , reverse drain current [a] v sd , body diode forward voltage [v] 25 o c 0.1 1 10 100 600 0.3 1 10 100 1000 10000 100000 c oss c iss c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd *note: 1. v gs = 0v 2. f = 1mhz c rss capacitances [pf] v ds , drain-source voltage [v] 0 35 70 105 140 0 2 4 6 8 10 v ds = 480v v ds = 300v v ds = 120v *note: i d = 26a v gs , gate-source voltage [v] q g , total gate charge [nc]
www.fairchildsemi.com 4 ?2015 fairchild semiconductor corporation FCH070N60E rev. 1.0 FCH070N60E ? n-channel superfet ? ii easy-drive mosfet typical performance characteristics (continued) figure 7. breakdown voltage variation figu re 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. case t emperature figure 11. eoss vs. drain to source voltage -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 *notes: 1. v gs = 0v 2. i d = 10ma bv dss , [normalized] drain-source breakdown voltage t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.5 1.0 1.5 2.0 2.5 *notes: 1. v gs = 10v 2. i d = 26a r ds(on) , [normalized] drain-source on-resistance t j , junction temperature [ o c] 0.1 1 10 100 1000 0.1 1 10 100 1000 10 s 100 s 1ms 10ms i d , drain current [a] v ds , drain-source voltage [v] operation in this area is limited by r ds(on) *notes: 1. t c = 25 o c 2. t j = 150 o c 3. single pulse dc 25 50 75 100 125 150 0 12 24 36 48 60 i d , drain current [a] t c , case temperature [ o c] 0 120 240 360 480 600 0 6 12 18 24 30 e oss , [ j] v ds , drain to source voltage [v]
www.fairchildsemi.com 5 ?2015 fairchild semiconductor corporation FCH070N60E rev. 1.0 FCH070N60E ? n-channel superfet ? ii easy-drive mosfet typical performance characteristics (continued) figure 12 . transient thermal response curve 10 -5 10 -4 10 -3 10 -2 10 -1 1 0.001 0.01 0.1 0.5 z jc (t), thermal response [ o c/w ] 0.01 0.1 0.2 0.05 0.02 *notes: 1. z jc (t) = 0.26 o c/w max. 2. duty factor, d= t 1 /t 2 3. t jm - t c = p dm * z jc (t) 0.5 single pulse t 1 , rectangular pulse duration [sec] t 1 p dm t 2
www.fairchildsemi.com 6 ?2015 fairchild semiconductor corporation FCH070N60E rev. 1.0 FCH070N60E ? n-channel superfet ? ii easy-drive mosfet figure 13. gate charge test circuit & waveform figure 14. resistive switchin g test circuit & waveforms figure 15. unclamped inductive switching test circuit & waveforms v gs v ds 10% 90% t d(on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs v gs v ds 10% 90% t d(on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs v gs v gs i g = const.
www.fairchildsemi.com 7 ?2015 fairchild semiconductor corporation FCH070N60E rev. 1.0 FCH070N60E ? n-channel superfet ? ii easy-drive mosfet figure 16. peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period --------------------------
www.fairchildsemi.com 8 ?2015 fairchild semiconductor corporation FCH070N60E rev. 1.0 FCH070N60E ? n-channel superfet ? ii easy-drive mosfet mechanical dimensions figure 16. to-247, molded, 3-lead, jedec ab long leads package drawings are provided as a service to customers considering fairchild com ponents. drawings may change in any manner without notice. please note the revision and/or date on the draw ing and contact a fairchild semiconductor representative to ver ify or obtain the most recent revision. package specifications do not expand the terms of fairchild?s worldwide terms and conditions, specif- ically the warranty therein, which covers fairchild products. always visit fairchild semiconductor?s online packag ing area for the most recent package drawings: https://www.fairchildsemi.com/des ign/package-specifications/pack agedetails.html?id=pn_to247-003
www.fairchildsemi.com 9 ?2015 fairchild semiconductor corporation FCH070N60E rev. 1.0 FCH070N60E ? n- channel superfet ? ii easy-drive mosfet life support policy fairchild?s products are not authorized fo r use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used here in: 1. life support devices or systems ar e devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a sign ificant injury of the user. 2. a critical component in any compone nt of a life supp ort, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information formative / in design datasheet contains the desi gn specifications for produc t development. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; s upplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice to improve design. no identification n eeded full production datasheet contains final specifications. fa irchild semiconductor reserves the right to make changes at any time without notice to improve the design. obsolete not in production datasheet contains specifications on a product that is discontinued by fairchild semiconductor. the datasheet is for reference information only. accupower? attitudeengine? awinda ? ax-cap ? * bitsic? build it now? coreplus? corepower? crossvolt ? ctl? current transfer logic? deuxpeed ? dual cool? ecospark ? efficentmax? esbc? fairchild ? fairchild semiconductor ? fact quiet series? fact ? fast ? fastvcore? fetbench? fps? f-pfs? frfet ? global power resource sm greenbridge? green fps? green fps? e-series? g max ? gto? intellimax? isoplanar? marking small speakers sound louder and better? megabuck? microcoupler? microfet? micropak? micropak2? millerdrive? motionmax? motiongrid ? mti ? mtx ? mvn ? mwsaver ? optohit? optologic ? optoplanar ? powertrench ? powerxs? programmable active droop? qfet ? qs? quiet series? rapidconfigure? saving our world, 1mw/w/kw at a time? signalwise? smartmax? smart start? solutions for your success? spm ? stealth? superfet ? supersot?-3 supersot?-6 supersot?-8 supremos ? syncfet? sync-lock? ?* tinyboost ? tinybuck ? tinycalc? tinylogic ? tinyopto? tinypower? tinypwm? tinywire? transic? trifault detect? truecurrent ? * serdes? uhc ? ultra frfet? unifet? vcx? visualmax? voltageplus? xs? xsens? ?? ? *trademarks of system general corporation, us ed under license by fairchild semiconductor. ? ? anti-counterfeiting policy fairchild semiconductor corporation?s anti-c ounterfeiting policy. fairchild?s anti-co unterfeiting policy is also stated on our external website, www.fairchildsemi.com, under sales support . counterfeiting of semiconductor parts is a growing problem in the industry. all manufactures of semiconductor products are expe riencing counterfeiting of their parts. customers who inadvertently purchase counterfeit parts experience many prob lems such as loss of brand reputation, substa ndard performance, failed application, and increased cost of productio n and manufacturing delays. fairchild is taking strong measures to protect ourselve s and our customers from the proliferation of counterfeit parts. fairchil d strongly encourages customers to purchase fairchild parts either directly from fa irchild or from authorized fairchild distributors who are listed by country on our web page cited above. products customers buy either from fairchild directly or fr om authorized fairchild distributors are genuine parts, have full traceability, meet fairchild?s qualit y standards for handing and storage and provide access to fairchild?s full range of up-to-date technical and product information. fairchild and our authorized distributors will stand behind all warranties and wi ll appropriately address and warranty issues that may arise. fairchild will not provide any warranty coverage or other assistance for parts bought from unau thorized sources. fairchild is committed to combat this global problem and encourage our customer s to do their part in stopping this practice by buying direct or from authorized distributors. rev. i73 trademarks the following includes registered and unregistered trademarks and service marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. disclaimer fairchild semiconductor reserves the right to make changes with out further notice to any products herein to improve reliability, function, or design. to obtain the latest, most up-to-date datasheet and pr oduct information, visit our website at http://www.fairchildsemi.com . fairchild does not assume any liability ar ising out of the application or use of any product or circuit described herein; neither does it co nvey any license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s worldwide te rms and conditions, specifically the warranty therein, which covers these products. tm ?
|
